SILICON-MICROMACHINED THZ SYSTEMS - ENABLING THE LARGE-SCALE EXPLOITATION OF MILLIMETER AND SUBMILLIMETER-WAVE FREQUENCIES?

Автор(и)

Ключові слова:

waveguide, silicon, filters, resonator

Анотація

Current THz systems are predominantly manufactured by CNC milling. Despite the high level of precision which CNC milling achieved in recent years, this fabrication method lacks volume manufacturability and is inferior in performance to silicon micromachining, which achieves feature sizes and fabrication reproducibility down to micrometers, surface roughness down to nanometers (for extremely low loss), and high-aspect ratio geometries which are impossible to fabricate in any other fabrication technology. Micromachined micromechanical devices, for instance mobile-phone microphones and inertial sensors, are already for many years manufactured to billions of devices per year at very low cost. This webinar gives an overview of state of the art, the capabilities and limitations of silicon micromachining for millimeter and submillimeter-wave frequencies, and gives several examples of recent achievements of very high performance silicon-micromachined waveguide based THz devices and systems, including: a low-loss waveguide technology with 0.02 dB/mm at 330 GHz, with integrated components such as low-loss couplers, power splitters, matched loads; micromachined high-Q filter examples based on cavity resonators with measured Q-factors of 1600 at 150 GHz and 900 at 700 GHz, enabling the first 1% fractional bandwidth filters at submillimeter-wave frequencies; a silicon-micromachined platform for a point-to-point telecommunication link including a 130-148 GHz antenna diplexer with 1.5 dB insertion loss and 60 dB isolation, and waveguide-integrated SiGe MMICs; very complex, multi-level waveguide devices including a orthomode transducer from 220-330 GHz with less than 0.6 dB insertion loss and cross-polarization of 35-70 dB in this waveguide band; a corporate-fed antenna array with 256 elements at 320 to 400 GHz, with only 0.8 dB insertion loss, achieving 34 dBi gain; a 1024 antenna array at 320-400 GHz with 38 dBi gain and 1.5 dB insertion loss; a frequency-steering micromachined radar frontend at 220-300 GHz, achieving a 55 degree field of view with a 3.5 to 10 degree HPBW, using an integrated 2.5D quasi-optical reflector and a leaky-wave antenna array, all of the size and thickness of a thumb nail; MEMS-waveguide switches operating at 140-220 GHz with 0.6 dB insertion loss and 50 dB isolation over the whole band, and even a 500-750 GHz switch with 2.5 dB insertion loss and 18 dB isolation; and a 2.5-dB insertion loss 360 degree phase shifter for the 220-330 GHz band with less than 4 degree phase error for all states over the whole bandwidth. Major applications presented are radar (in particular next-generation car radars), telecommunication and space-borne radiometers.

Біографія автора

Joachim Oberhammer, KTH Royal Institute of Technology School of Electrical Engineering

Joachim Oberhammer (Senior Member, IEEE) was born in Italy, in 1976. He received the M.Sc. degree in EE from the Graz University of Technology, Graz, Austria, in 2000, and the Ph.D. degree from the KTH Royal Institute of Technology, Stockholm, Sweden, in 2004.,He was a Post-Doctoral Research Fellow at Nanyang Technological University, Singapore, in 2004, and at Kyoto University, Kyoto, Japan, in 2008. Since 2005, he has been leading radio frequency/microwave/terahertz micro-electromechanical systems research at KTH; an Associate Professor at KTH in 2010; and a Professor in microwave and THz microsystems at KTH since 2015. He was a Guest Researcher at Nanyang Technological University in 2007 and at NASA-Jet Propulsion Laboratory, Pasadena, CA, USA, in 2014, and a Guest Professor at the Universidad Carlos III de Madrid, Getafe, Spain, in 2019. He is the author or coauthor of more than 100 reviewed research articles and holds four patents.,Dr. Oberhammer has been a Steering Group Member of the IEEE MTT-S and AP-S Chapters Sweden since 2009. He served as a TPRC Member of IEEE Transducers (2009, 2015, and 2019), IEEE International Microwave Symposiums (2010-2018), IEEE Micro Electromechanical Systems (2011 and 2012), IEEE Radio and Wireless Week (2015 and 2016), and EuMCE (2019). In 2004, 2007, and 2008, he received the award from the Ericsson Research Foundation, a grant from the Swedish Innovation Bridge, and a scholarship from the Japanese Society for the Promotion of Science, respectively. The research work he is heading received six best paper awards (five of which at IEEE conferences) and four IEEE Graduate Fellowship Awards (by MTT-S and by AP-S) since 2009. In 2013, he received an ERC Consolidator Grant from the European Research Council. He was a Representative of Sweden/Norway/Iceland in the European Microwave Association from 2016 to 2018. He has been an Associate Editor of IEEE Transactions on Terahertz Science and Technology since 2018.

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Опубліковано

2022-05-22

Як цитувати

Oberhammer, J. . (2022). SILICON-MICROMACHINED THZ SYSTEMS - ENABLING THE LARGE-SCALE EXPLOITATION OF MILLIMETER AND SUBMILLIMETER-WAVE FREQUENCIES?. Збірник матеріалів Міжнародної науково-технічної конференції «ПЕРСПЕКТИВИ ТЕЛЕКОМУНІКАЦІЙ», 14–16. вилучено із https://conferenc-journal.its.kpi.ua/article/view/255152